IMBD4148-HE3-18 Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 24+ | 13.95 грн |
| 35+ | 9.20 грн |
| 100+ | 5.08 грн |
| 500+ | 3.20 грн |
| 1000+ | 2.78 грн |
| 2500+ | 2.43 грн |
| 5000+ | 2.09 грн |
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Технічний опис IMBD4148-HE3-18 Vishay Semiconductors
Description: DIODE GEN PURP 75V 150MA SOT23-3, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA, Voltage - DC Reverse (Vr) (Max): 75 V, Part Status: Active, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: SOT-23-3, Current - Average Rectified (Io): 150mA, Technology: Standard, Reverse Recovery Time (trr): 4 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції IMBD4148-HE3-18
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IMBD4148-HE3-18 | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 75V 150MA SOT23-3 Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Voltage - DC Reverse (Vr) (Max): 75 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOT-23-3 Current - Average Rectified (Io): 150mA Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |