Технічний опис IMBD4448-HE3-08 Vishay
Description: DIODE GEN PURP 75V 150MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Current - Average Rectified (Io): 150mA, Supplier Device Package: SOT-23-3, Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 75 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA, Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V.
Інші пропозиції IMBD4448-HE3-08
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IMBD4448-HE3-08 | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 75V 150MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 150mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 2.5 µA @ 70 V |
товару немає в наявності |
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IMBD4448-HE3-08 | Виробник : Vishay Semiconductors |
Diodes - General Purpose, Power, Switching 750V 150mA 4ns 500mA IFSM |
товару немає в наявності |