IMBF170R450M1XTMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: SICFET N-CH 1700V 9.8A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO263-7-13
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V
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Технічний опис IMBF170R450M1XTMA1 Infineon Technologies
Description: SICFET N-CH 1700V 9.8A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V, Power Dissipation (Max): 107W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 2.5mA, Supplier Device Package: PG-TO263-7-13, Drive Voltage (Max Rds On, Min Rds On): 12V, 15V, Vgs (Max): +20V, -10V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V.
Інші пропозиції IMBF170R450M1XTMA1 за ціною від 191.01 грн до 513.11 грн
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IMBF170R450M1XTMA1 | Infineon Technologies |
Description: SICFET N-CH 1700V 9.8A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 2.5mA Supplier Device Package: PG-TO263-7-13 Drive Voltage (Max Rds On, Min Rds On): 12V, 15V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V |
на замовлення 1551 шт: термін постачання 21-31 дні (днів) |
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IMBF170R450M1XTMA1 | Infineon Technologies |
SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package |
на замовлення 3715 шт: термін постачання 21-30 дні (днів) |
|
| IMBF170R450M1XTMA1 |
|
Виробник: Infineon Technologies
Description: SICFET N-CH 1700V 9.8A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO263-7-13
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V
Description: SICFET N-CH 1700V 9.8A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2A, 15V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO263-7-13
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 1000 V
на замовлення 1551 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 489.24 грн |
| 10+ | 317.41 грн |
| 100+ | 230.46 грн |
| 500+ | 205.19 грн |
| IMBF170R450M1XTMA1 |
|
Виробник: Infineon Technologies
SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
на замовлення 3715 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 513.11 грн |
| 10+ | 341.24 грн |
| 100+ | 215.68 грн |
| 500+ | 204.40 грн |
| 1000+ | 191.01 грн |