IMBF170R650M1XTMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: SICFET N-CH 1700V 7.4A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.5A, 15V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
Supplier Device Package: PG-TO263-7-13
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 1000 V
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Технічний опис IMBF170R650M1XTMA1 Infineon Technologies
Description: SICFET N-CH 1700V 7.4A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc), Rds On (Max) @ Id, Vgs: 650mOhm @ 1.5A, 15V, Power Dissipation (Max): 88W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 1.7mA, Supplier Device Package: PG-TO263-7-13, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 12V, 15V, Vgs (Max): +20V, -10V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 12 V, Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 1000 V.
Інші пропозиції IMBF170R650M1XTMA1 за ціною від 152.15 грн до 432.53 грн
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IMBF170R650M1XTMA1 | Infineon Technologies |
Description: SICFET N-CH 1700V 7.4A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 1.5A, 15V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 1.7mA Supplier Device Package: PG-TO263-7-13 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V, 15V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 1000 V |
на замовлення 1761 шт: термін постачання 21-31 дні (днів) |
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IMBF170R650M1XTMA1 | Infineon Technologies |
SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package |
на замовлення 1944 шт: термін постачання 21-30 дні (днів) |
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| IMBF170R650M1XTMA1 |
|
Виробник: Infineon Technologies
Description: SICFET N-CH 1700V 7.4A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.5A, 15V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
Supplier Device Package: PG-TO263-7-13
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 1000 V
Description: SICFET N-CH 1700V 7.4A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.5A, 15V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
Supplier Device Package: PG-TO263-7-13
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 1000 V
на замовлення 1761 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 364.75 грн |
| 10+ | 234.18 грн |
| 100+ | 167.71 грн |
| 500+ | 152.15 грн |
| IMBF170R650M1XTMA1 |
|
Виробник: Infineon Technologies
SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
SiC MOSFETs CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
на замовлення 1944 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 432.53 грн |
| 10+ | 282.88 грн |
| 100+ | 178.32 грн |
| 500+ | 162.81 грн |
| 1000+ | 152.24 грн |