IMBG120R008M2HXTMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 189A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 189A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 89.9A, 18V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 28.3mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 800 V
| Кількість | Ціна |
|---|---|
| 1000+ | 1473.81 грн |
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Технічний опис IMBG120R008M2HXTMA1 Infineon Technologies
Description: SICFET N-CH 1200V 189A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 189A (Tc), Rds On (Max) @ Id, Vgs: 7.7mOhm @ 89.9A, 18V, Power Dissipation (Max): 800W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 28.3mA, Supplier Device Package: PG-TO263-7-12, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 800 V.
Інші пропозиції IMBG120R008M2HXTMA1 за ціною від 1295.91 грн до 2403.18 грн
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IMBG120R008M2HXTMA1 | Виробник : Infineon Technologies |
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package |
на замовлення 1389 шт: термін постачання 21-30 дні (днів) |
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IMBG120R008M2HXTMA1 | Виробник : Infineon Technologies |
Description: SICFET N-CH 1200V 189A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 189A (Tc) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 89.9A, 18V Power Dissipation (Max): 800W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 28.3mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 800 V |
на замовлення 2693 шт: термін постачання 21-31 дні (днів) |
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