IMBG120R017M2HXTMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 107A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 40.4A, 18V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 800 V
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Технічний опис IMBG120R017M2HXTMA1 Infineon Technologies
Description: SICFET N-CH 1200V 107A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 107A (Tc), Rds On (Max) @ Id, Vgs: 17.1mOhm @ 40.4A, 18V, Power Dissipation (Max): 470W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 12.7mA, Supplier Device Package: PG-TO263-7-12, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 800 V.
Інші пропозиції IMBG120R017M2HXTMA1 за ціною від 792.67 грн до 1296.44 грн
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IMBG120R017M2HXTMA1 | Infineon Technologies |
Description: SICFET N-CH 1200V 107A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 107A (Tc) Rds On (Max) @ Id, Vgs: 17.1mOhm @ 40.4A, 18V Power Dissipation (Max): 470W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 12.7mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 800 V |
на замовлення 1977 шт: термін постачання 21-31 дні (днів) |
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| IMBG120R017M2HXTMA1 |
|
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 107A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 40.4A, 18V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 800 V
Description: SICFET N-CH 1200V 107A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 40.4A, 18V
Power Dissipation (Max): 470W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 800 V
на замовлення 1977 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1296.44 грн |
| 10+ | 889.09 грн |
| 100+ | 792.67 грн |