IMBG120R030M1HXTMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 56A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 25A, 18V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 11.5mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Vgs (Max): +18V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 800 V
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Технічний опис IMBG120R030M1HXTMA1 Infineon Technologies
Description: SICFET N-CH 1200V 56A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 41mOhm @ 25A, 18V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 11.5mA, Supplier Device Package: PG-TO263-7-12, Part Status: Active, Vgs (Max): +18V, -15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 800 V.
Інші пропозиції IMBG120R030M1HXTMA1 за ціною від 479.99 грн до 1069.66 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IMBG120R030M1HXTMA1 | Infineon Technologies |
SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package |
на замовлення 827 шт: термін постачання 21-30 дні (днів) |
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IMBG120R030M1HXTMA1 | Infineon Technologies |
Description: SICFET N-CH 1200V 56A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 25A, 18V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 11.5mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Vgs (Max): +18V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 800 V |
на замовлення 1353 шт: термін постачання 21-31 дні (днів) |
|
| IMBG120R030M1HXTMA1 |
|
Виробник: Infineon Technologies
SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
на замовлення 827 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1041.03 грн |
| 10+ | 721.39 грн |
| 100+ | 565.27 грн |
| 500+ | 564.57 грн |
| 1000+ | 479.99 грн |
| IMBG120R030M1HXTMA1 |
|
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 56A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 25A, 18V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 11.5mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Vgs (Max): +18V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 800 V
Description: SICFET N-CH 1200V 56A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 25A, 18V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 11.5mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Vgs (Max): +18V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 800 V
на замовлення 1353 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1069.66 грн |
| 10+ | 725.23 грн |
| 100+ | 618.56 грн |