IMBG120R090M1HXTMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: SICFET N-CH 1.2KV 26A TO263
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -15V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 3.7mA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 18V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
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Технічний опис IMBG120R090M1HXTMA1 Infineon Technologies
Description: SICFET N-CH 1.2KV 26A TO263, Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +18V, -15V, Part Status: Active, Supplier Device Package: PG-TO263-7-12, Vgs(th) (Max) @ Id: 5.7V @ 3.7mA, Power Dissipation (Max): 136W (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 18V, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
Інші пропозиції IMBG120R090M1HXTMA1 за ціною від 217.79 грн до 645.44 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IMBG120R090M1HXTMA1 | Infineon Technologies |
SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package |
на замовлення 1295 шт: термін постачання 21-30 дні (днів) |
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IMBG120R090M1HXTMA1 | Infineon Technologies |
Description: SICFET N-CH 1.2KV 26A TO263 Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +18V, -15V Part Status: Active Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.7V @ 3.7mA Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 18V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) |
на замовлення 2557 шт: термін постачання 21-31 дні (днів) |
|
| IMBG120R090M1HXTMA1 |
|
Виробник: Infineon Technologies
SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
на замовлення 1295 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 461.31 грн |
| 10+ | 342.05 грн |
| 100+ | 255.85 грн |
| 500+ | 244.57 грн |
| 1000+ | 217.79 грн |
| IMBG120R090M1HXTMA1 |
|
Виробник: Infineon Technologies
Description: SICFET N-CH 1.2KV 26A TO263
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -15V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 3.7mA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 18V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Description: SICFET N-CH 1.2KV 26A TO263
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -15V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 3.7mA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.5A, 18V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
на замовлення 2557 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 645.44 грн |
| 10+ | 424.01 грн |
| 100+ | 312.35 грн |
| 500+ | 255.20 грн |