IMBG120R181M2HXTMA1 Infineon Technologies

Description: SICFET N-CH 1200V 14.9A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc), Rds On (Max) @ Id, Vgs: 181.4mOhm @ 3.9A, 18V, Power Dissipation (Max): 94W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 1.2mA, Supplier Device Package: PG-TO263-7-12, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V.