IMBG120R234M2HXTMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 233.9mOhm @ 3A, 18V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 900µA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 800 V
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Технічний опис IMBG120R234M2HXTMA1 Infineon Technologies
Description: SIC DISCRETE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc), Rds On (Max) @ Id, Vgs: 233.9mOhm @ 3A, 18V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 900µA, Supplier Device Package: PG-TO263-7-12, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +20V, -7V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 800 V.
Інші пропозиції IMBG120R234M2HXTMA1 за ціною від 116.30 грн до 368.71 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IMBG120R234M2HXTMA1 | Infineon Technologies |
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package |
на замовлення 1376 шт: термін постачання 21-30 дні (днів) |
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IMBG120R234M2HXTMA1 | Infineon Technologies |
Description: SIC DISCRETE Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc) Rds On (Max) @ Id, Vgs: 233.9mOhm @ 3A, 18V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 900µA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 800 V |
на замовлення 1097 шт: термін постачання 21-31 дні (днів) |
|
| IMBG120R234M2HXTMA1 |
|
Виробник: Infineon Technologies
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
на замовлення 1376 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 356.05 грн |
| 10+ | 233.44 грн |
| 100+ | 145.19 грн |
| 500+ | 137.44 грн |
| 1000+ | 116.30 грн |
| IMBG120R234M2HXTMA1 |
|
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 233.9mOhm @ 3A, 18V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 900µA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 800 V
Description: SIC DISCRETE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 233.9mOhm @ 3A, 18V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 900µA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 800 V
на замовлення 1097 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 368.71 грн |
| 10+ | 235.86 грн |
| 100+ | 168.15 грн |
| 500+ | 130.70 грн |