IMBG120R350M1HXTMA1 Infineon Technologies

Description: SICFET N-CH 1200V 8.1A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc), Rds On (Max) @ Id, Vgs: 468mOhm @ 2A, 18V, Power Dissipation (Max): 65W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 1mA, Supplier Device Package: PG-TO263-7-12, Part Status: Active, Vgs (Max): +18V, -15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 800 V.