IMBG40R011M2HXTMA1 Infineon Technologies

Description: SIC-MOS, Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 200 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V, Drain to Source Voltage (Vdss): 400 V, Vgs (Max): +23V, -7V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Supplier Device Package: PG-TO263-7-11, Vgs(th) (Max) @ Id: 5.6V @ 13.3mA, Power Dissipation (Max): 3.8W (Ta), 429W (Tc), Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V, Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 133A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).