IMBG65R007M2HXTMA1 Infineon Technologies

Description: SICFET N-CH 650V 238A TO263-7, Rds On (Max) @ Id, Vgs: 8.5mOhm @ 146.3A, 18V, Current - Continuous Drain (Id) @ 25°C: 238A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +23V, -7V, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Supplier Device Package: PG-TO263-7-12, Vgs(th) (Max) @ Id: 5.6V @ 2.97mA, Power Dissipation (Max): 789W (Tc).