IMBG65R009M1HXTMA1 Infineon Technologies

Description: SILICON CARBIDE MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 13.6mOhm @ 97.2A, 18V, Power Dissipation (Max): 555W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 32.4mA, Supplier Device Package: PG-TO263-7, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 6054 pF @ 400 V.