IMBG65R020M2HXTMA1 Infineon Technologies

Description: SILICON CARBIDE MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +23V, -7V, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Supplier Device Package: PG-TO263-7-12, Vgs(th) (Max) @ Id: 5.6V @ 9.5mA, Power Dissipation (Max): 326W (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V, Current - Continuous Drain (Id) @ 25°C: 91A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).