IMBG65R040M2HXTMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Power Dissipation (Max): 197W (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 22.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
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Технічний опис IMBG65R040M2HXTMA1 Infineon Technologies
Description: SILICON CARBIDE MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +23V, -7V, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Supplier Device Package: PG-TO263-7-12, Vgs(th) (Max) @ Id: 5.6V @ 4.6mA, Power Dissipation (Max): 197W (Tc), Rds On (Max) @ Id, Vgs: 49mOhm @ 22.9A, 18V, Current - Continuous Drain (Id) @ 25°C: 49A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
Інші пропозиції IMBG65R040M2HXTMA1 за ціною від 255.85 грн до 608.50 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IMBG65R040M2HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -7V Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.6V @ 4.6mA Power Dissipation (Max): 197W (Tc) Rds On (Max) @ Id, Vgs: 49mOhm @ 22.9A, 18V Current - Continuous Drain (Id) @ 25°C: 49A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) |
на замовлення 1906 шт: термін постачання 21-31 дні (днів) |
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IMBG65R040M2HXTMA1 | Infineon Technologies |
SiC MOSFETs SILICON CARBIDE MOSFET |
на замовлення 1911 шт: термін постачання 21-30 дні (днів) |
|
| IMBG65R040M2HXTMA1 |
|
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Power Dissipation (Max): 197W (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 22.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Description: SILICON CARBIDE MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Power Dissipation (Max): 197W (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 22.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
на замовлення 1906 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 572.49 грн |
| 10+ | 375.52 грн |
| 100+ | 293.11 грн |
| IMBG65R040M2HXTMA1 |
|
Виробник: Infineon Technologies
SiC MOSFETs SILICON CARBIDE MOSFET
SiC MOSFETs SILICON CARBIDE MOSFET
на замовлення 1911 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 608.50 грн |
| 10+ | 410.95 грн |
| 100+ | 281.23 грн |
| 1000+ | 267.83 грн |
| 2000+ | 255.85 грн |