IMBG65R083M1HXTMA1 Infineon Technologies
| Кількість | Ціна |
|---|---|
| 1+ | 452.26 грн |
| 10+ | 341.24 грн |
| 100+ | 240.35 грн |
| 500+ | 213.56 грн |
| 1000+ | 181.84 грн |
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Технічний опис IMBG65R083M1HXTMA1 Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-, Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +23V, -5V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: PG-TO263-7-12, Vgs(th) (Max) @ Id: 5.7V @ 3.3mA, Power Dissipation (Max): 126W (Tc), Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
Інші пропозиції IMBG65R083M1HXTMA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IMBG65R083M1HXTMA1 | Infineon Technologies |
 Description: SILICON CARBIDE MOSFET PG-TO263-Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.7V @ 3.3mA Power Dissipation (Max): 126W (Tc) Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
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IMBG65R083M1HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET PG-TO263- Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.7V @ 3.3mA Power Dissipation (Max): 126W (Tc) Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. |
| IMBG65R083M1HXTMA1 |
|
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Power Dissipation (Max): 126W (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Power Dissipation (Max): 126W (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IMBG65R083M1HXTMA1 |
|
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Power Dissipation (Max): 126W (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: SILICON CARBIDE MOSFET PG-TO263-
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Power Dissipation (Max): 126W (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
товару немає в наявності
В кошику
од. на суму грн.