IMCQ120R010M2HXTMA1 Infineon Technologies

Description: SICFET N-CH 1200V 195A 22PWRBSOP, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 69A, 18V, Power Dissipation (Max): 880W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 21.7mA, Supplier Device Package: PG-HDSOP-22, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 150.1 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 800 V.