IMCQ120R017M2HXTMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: SICFET N-CH 1200V 118A 22PWRBSOP
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 40A, 18V
Power Dissipation (Max): 580W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91.1 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3730 pF @ 800 V
на замовлення 168 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1317.77 грн |
| 10+ | 903.99 грн |
| 100+ | 799.28 грн |
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Технічний опис IMCQ120R017M2HXTMA1 Infineon Technologies
Description: SICFET N-CH 1200V 118A 22PWRBSOP, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 118A (Tc), Rds On (Max) @ Id, Vgs: 17.1mOhm @ 40A, 18V, Power Dissipation (Max): 580W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 12.7mA, Supplier Device Package: PG-HDSOP-22, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 91.1 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3730 pF @ 800 V.
Інші пропозиції IMCQ120R017M2HXTMA1
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IMCQ120R017M2HXTMA1 | Виробник : Infineon Technologies |
Description: SICFET N-CH 1200V 118A 22PWRBSOP Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 118A (Tc) Rds On (Max) @ Id, Vgs: 17.1mOhm @ 40A, 18V Power Dissipation (Max): 580W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 12.7mA Supplier Device Package: PG-HDSOP-22 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 91.1 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3730 pF @ 800 V |
товару немає в наявності |
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IMCQ120R017M2HXTMA1 | Виробник : Infineon Technologies |
CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling |
товару немає в наявності |