IMCQ120R040M2HXTMA1 Infineon Technologies
Виробник: Infineon Technologies
SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 706.36 грн |
| 10+ | 545.64 грн |
| 100+ | 395.74 грн |
| 500+ | 352.54 грн |
| 750+ | 313.53 грн |
Відгуки про товар
Написати відгук
Технічний опис IMCQ120R040M2HXTMA1 Infineon Technologies
Description: SICFET N-CH 1200V 56A 22PWRBSOP, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V, Power Dissipation (Max): 288W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 5.5mA, Supplier Device Package: PG-HDSOP-22-3, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 42.4 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 800 V.
Інші пропозиції IMCQ120R040M2HXTMA1 за ціною від 391.79 грн до 760.30 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IMCQ120R040M2HXTMA1 | Infineon Technologies |
Description: SICFET N-CH 1200V 56A 22PWRBSOP Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V Power Dissipation (Max): 288W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 5.5mA Supplier Device Package: PG-HDSOP-22-3 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 42.4 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 800 V |
на замовлення 281 шт: термін постачання 21-31 дні (днів) |
|
| IMCQ120R040M2HXTMA1 |
|
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 56A 22PWRBSOP
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V
Power Dissipation (Max): 288W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-HDSOP-22-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 800 V
Description: SICFET N-CH 1200V 56A 22PWRBSOP
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V
Power Dissipation (Max): 288W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-HDSOP-22-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 800 V
на замовлення 281 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 760.30 грн |
| 10+ | 505.48 грн |
| 100+ | 391.79 грн |