IMDQ65R020M2HXUMA1 Infineon Technologies
на замовлення 50 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1201.61 грн |
| 10+ | 977.17 грн |
| 25+ | 793.80 грн |
| 50+ | 760.70 грн |
| 100+ | 729.80 грн |
| 250+ | 694.48 грн |
| 500+ | 664.32 грн |
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Технічний опис IMDQ65R020M2HXUMA1 Infineon Technologies
Description: IMDQ65R020M2HXUMA1, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 97A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V, Power Dissipation (Max): 394W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 9.5mA, Supplier Device Package: PG-HDSOP-22-1, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V.
Інші пропозиції IMDQ65R020M2HXUMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IMDQ65R020M2HXUMA1 | Виробник : Infineon Technologies |
Description: IMDQ65R020M2HXUMA1 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V Power Dissipation (Max): 394W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 9.5mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V |
товару немає в наявності |
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IMDQ65R020M2HXUMA1 | Виробник : Infineon Technologies |
Description: IMDQ65R020M2HXUMA1 Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 97A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 46.9A, 20V Power Dissipation (Max): 394W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 9.5mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V |
товару немає в наявності |