IMDQ75R020M1HXUMA1 Infineon Technologies

Description: IMDQ75R020M1HXUMA1, Packaging: Tape & Reel (TR), Package / Case: 22-PowerBSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 81A (Tj), Rds On (Max) @ Id, Vgs: 18mOhm @ 32.5A, 20V, Power Dissipation (Max): 326W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 11.7mA, Supplier Device Package: PG-HDSOP-22-1, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +20V, -2V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2217 pF @ 500 V.