IMLT40R011M2HXTMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: IMLT40R011M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-HDSOP-16-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 200 V
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Технічний опис IMLT40R011M2HXTMA1 Infineon Technologies
Description: IMLT40R011M2HXTMA1, Packaging: Tube, Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 144A (Tc), Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V, Power Dissipation (Max): 429W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 13.3mA, Supplier Device Package: PG-HDSOP-16-8, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 200 V.