IMLT40R025M2HXTMA1 INFINEON
Виробник: INFINEON
Description: INFINEON - IMLT40R025M2HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 68 A, 400 V, 0.0321 ohm, HDSOP
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 400V
rohsCompliant: YES
Dauer-Drainstrom Id: 68A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 5.6V
MOSFET-Modul-Konfiguration: Eins
Verlustleistung: 214W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: HDSOP
Anzahl der Pins: 16Pin(s)
Produktpalette: CoolSiC G2 Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 18V
Drain-Source-Durchgangswiderstand: 0.0321ohm
Відгуки про товар
Написати відгук
Технічний опис IMLT40R025M2HXTMA1 INFINEON
Description: INFINEON - IMLT40R025M2HXTMA1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 68 A, 400 V, 0.0321 ohm, HDSOP, tariffCode: 85412900, euEccn: NLR, Drain-Source-Spannung Vds: 400V, rohsCompliant: YES, Dauer-Drainstrom Id: 68A, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 5.6V, MOSFET-Modul-Konfiguration: Eins, Verlustleistung: 214W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: HDSOP, Anzahl der Pins: 16Pin(s), Produktpalette: CoolSiC G2 Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 18V, Drain-Source-Durchgangswiderstand: 0.0321ohm.
Інші пропозиції IMLT40R025M2HXTMA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IMLT40R025M2HXTMA1 | Infineon Technologies |
Description: IMLT40R025M2HXTMA1 Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 5.6mA Supplier Device Package: PG-HDSOP-16-6 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
IMLT40R025M2HXTMA1 | Infineon Technologies |
Description: IMLT40R025M2HXTMA1 Packaging: Tube Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 5.6mA Supplier Device Package: PG-HDSOP-16-6 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. |
| IMLT40R025M2HXTMA1 |
|
Виробник: Infineon Technologies
Description: IMLT40R025M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V
Description: IMLT40R025M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V
товару немає в наявності
В кошику
од. на суму грн.
| IMLT40R025M2HXTMA1 |
|
Виробник: Infineon Technologies
Description: IMLT40R025M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V
Description: IMLT40R025M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.