IMLT65R040M2HXTMA1 Infineon Technologies

Description: SICFET N-CH 650V 57A HDSOP-16, Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 57A (Tc), Rds On (Max) @ Id, Vgs: 49mOhm @ 22.9A, 18V, Power Dissipation (Max): 268W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 4.6mA, Supplier Device Package: PG-HDSOP-16-6, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V.