IMSQ120R053M2HHXUMA1 Infineon Technologies
Виробник: Infineon TechnologiesSiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
на замовлення 414 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1021.68 грн |
| 10+ | 780.17 грн |
| 100+ | 586.37 грн |
| 750+ | 585.68 грн |
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Технічний опис IMSQ120R053M2HHXUMA1 Infineon Technologies
Description: SICFET 2N-CH 1200V 45A HDSOP16, Packaging: Tape & Reel (TR), Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), Power - Max: 234W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 800V, Rds On (Max) @ Id, Vgs: 53mOhm @ 13A, 18V, Gate Charge (Qg) (Max) @ Vgs: 28nC @ 0V, Vgs(th) (Max) @ Id: 5.1V @ 4.1mA, Supplier Device Package: PG-HDSOP-16-221.
Інші пропозиції IMSQ120R053M2HHXUMA1 за ціною від 559.26 грн до 1025.98 грн
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IMSQ120R053M2HHXUMA1 | Виробник : Infineon Technologies |
Description: SICFET 2N-CH 1200V 45A HDSOP16 Packaging: Cut Tape (CT) Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) Power - Max: 234W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 800V Rds On (Max) @ Id, Vgs: 53mOhm @ 13A, 18V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 0V Vgs(th) (Max) @ Id: 5.1V @ 4.1mA Supplier Device Package: PG-HDSOP-16-221 |
на замовлення 699 шт: термін постачання 21-31 дні (днів) |
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IMSQ120R053M2HHXUMA1 | Виробник : Infineon Technologies |
Description: SICFET 2N-CH 1200V 45A HDSOP16 Packaging: Tape & Reel (TR) Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) Power - Max: 234W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 800V Rds On (Max) @ Id, Vgs: 53mOhm @ 13A, 18V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 0V Vgs(th) (Max) @ Id: 5.1V @ 4.1mA Supplier Device Package: PG-HDSOP-16-221 |
товару немає в наявності |