IMT65R015M2HXUMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 64.2A, 20V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
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Технічний опис IMT65R015M2HXUMA1 Infineon Technologies
Description: SILICON CARBIDE MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 131A (Tc), Rds On (Max) @ Id, Vgs: 13.2mOhm @ 64.2A, 20V, Power Dissipation (Max): 535W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 13mA, Supplier Device Package: PG-HSOF-8-2, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V.
Інші пропозиції IMT65R015M2HXUMA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
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IMT65R015M2HXUMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 131A (Tc) Rds On (Max) @ Id, Vgs: 13.2mOhm @ 64.2A, 20V Power Dissipation (Max): 535W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 13mA Supplier Device Package: PG-HSOF-8-2 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
 |
IMT65R015M2HXUMA1 | Infineon Technologies |
SiC MOSFETs SILICON CARBIDE MOSFET |
товару немає в наявності |
В кошику од. на суму грн. |
| IMT65R015M2HXUMA1 |
|
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 64.2A, 20V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 131A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 64.2A, 20V
Power Dissipation (Max): 535W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IMT65R015M2HXUMA1 |
|
Виробник: Infineon Technologies
SiC MOSFETs SILICON CARBIDE MOSFET
SiC MOSFETs SILICON CARBIDE MOSFET
товару немає в наявності
В кошику
од. на суму грн.