IMW120R007M1HXKSA1 Infineon Technologies

Description: SIC DISCRETE, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 225A (Tc), Rds On (Max) @ Id, Vgs: 9.9mOhm @ 108A, 18V, Power Dissipation (Max): 750W (Tc), Vgs(th) (Max) @ Id: 5.2V @ 47mA, Supplier Device Package: PG-TO247-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 289 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 9170 pF @ 800 V.