IMW120R020M1HXKSA1 Infineon Technologies

Description: SIC DISCRETE, Input Capacitance (Ciss) (Max) @ Vds: 3460 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +20V, -5V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Part Status: Active, Supplier Device Package: PG-TO247-3, Vgs(th) (Max) @ Id: 5.2V @ 17.6mA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 26.9mOhm @ 41A, 18V, Current - Continuous Drain (Id) @ 25°C: 98A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.