IMW120R350M1HXKSA1 Infineon Technologies

Description: SICFET N-CH 1.2KV 4.7A TO247-3, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +23V, -7V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Part Status: Active, Supplier Device Package: PG-TO247-3-41, Vgs(th) (Max) @ Id: 5.7V @ 1mA, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 455mOhm @ 2A, 18V, Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V.