IMW65R030M1HXKSA1 Infineon Technologies

Description: SILICON CARBIDE MOSFET, PG-TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 29.5A, 18V, Power Dissipation (Max): 197W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 8.8mA, Supplier Device Package: PG-TO247-3-41, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +20V, -2V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 400 V.