IMW65R057M1HXKSA1 Infineon Technologies
| Кількість | Ціна |
|---|---|
| 1+ | 482.69 грн |
| 10+ | 321.79 грн |
| 100+ | 244.57 грн |
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Технічний опис IMW65R057M1HXKSA1 Infineon Technologies
Description: SILICON CARBIDE MOSFET, PG-TO247, Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +20V, -2V, Drive Voltage (Max Rds On, Min Rds On): 18V, Part Status: Active, Supplier Device Package: PG-TO247-3-41, Vgs(th) (Max) @ Id: 5.7V @ 5mA, Power Dissipation (Max): 133W (Tc), Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції IMW65R057M1HXKSA1 за ціною від 424.36 грн до 742.18 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IMW65R057M1HXKSA1 | Infineon Technologies |
 Description: SILICON CARBIDE MOSFET, PG-TO247Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +20V, -2V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: PG-TO247-3-41 Vgs(th) (Max) @ Id: 5.7V @ 5mA Power Dissipation (Max): 133W (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 84 шт: термін постачання 21-31 дні (днів) |
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| IMW65R057M1HXKSA1 |
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Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET, PG-TO247
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +20V, -2V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Power Dissipation (Max): 133W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: SILICON CARBIDE MOSFET, PG-TO247
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +20V, -2V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO247-3-41
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Power Dissipation (Max): 133W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 84 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 742.18 грн |
| 30+ | 424.36 грн |