IMW65R083M1HXKSA1 Infineon Technologies

Description: SILICON CARBIDE MOSFET, PG-TO247, Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +20V, -2V, Drive Voltage (Max Rds On, Min Rds On): 18V, Part Status: Active, Supplier Device Package: PG-TO247-3-41, Vgs(th) (Max) @ Id: 5.7V @ 3.3mA, Power Dissipation (Max): 104W (Tc), Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.