IMYH200R024M1HXKSA1 Infineon Technologies
Виробник: Infineon Technologies
SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
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Технічний опис IMYH200R024M1HXKSA1 Infineon Technologies
Description: SIC DISCRETE, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 89A (Tc), Supplier Device Package: PG-TO247-4-U04, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +20V, -7V, Drain to Source Voltage (Vdss): 2000 V, Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 18 V, Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V, Power Dissipation (Max): 576W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 24mA.
Інші пропозиції IMYH200R024M1HXKSA1 за ціною від 1890.95 грн до 3061.50 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IMYH200R024M1HXKSA1 | Infineon Technologies |
Description: SIC DISCRETE Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Supplier Device Package: PG-TO247-4-U04 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -7V Drain to Source Voltage (Vdss): 2000 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 18 V Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V Power Dissipation (Max): 576W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 24mA |
на замовлення 1069 шт: термін постачання 21-31 дні (днів) |
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| IMYH200R024M1HXKSA1 |
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Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Supplier Device Package: PG-TO247-4-U04
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -7V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 18 V
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 576W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 24mA
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Supplier Device Package: PG-TO247-4-U04
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -7V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 18 V
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 576W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 24mA
на замовлення 1069 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 3061.50 грн |
| 30+ | 1979.13 грн |
| 120+ | 1890.95 грн |