IMYH200R075M1HXKSA1 Infineon Technologies
Виробник: Infineon Technologies
SiC MOSFETs CoolSiC 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package
| Кількість | Ціна |
|---|---|
| 1+ | 1369.12 грн |
| 10+ | 847.83 грн |
| 100+ | 710.46 грн |
Відгуки про товар
Написати відгук
Технічний опис IMYH200R075M1HXKSA1 Infineon Technologies
Description: SIC DISCRETE, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 98mOhm @ 13A, 18V, Power Dissipation (Max): 267W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 7.7mA, Supplier Device Package: PG-TO247-4-U04, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +20V, -7V, Drain to Source Voltage (Vdss): 2000 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V.
Інші пропозиції IMYH200R075M1HXKSA1 за ціною від 867.46 грн до 1651.67 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IMYH200R075M1HXKSA1 | Infineon Technologies |
Description: SIC DISCRETE Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 13A, 18V Power Dissipation (Max): 267W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 7.7mA Supplier Device Package: PG-TO247-4-U04 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -7V Drain to Source Voltage (Vdss): 2000 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V |
на замовлення 460 шт: термін постачання 21-31 дні (днів) |
|
| IMYH200R075M1HXKSA1 |
|
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 13A, 18V
Power Dissipation (Max): 267W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 7.7mA
Supplier Device Package: PG-TO247-4-U04
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -7V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 13A, 18V
Power Dissipation (Max): 267W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 7.7mA
Supplier Device Package: PG-TO247-4-U04
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -7V
Drain to Source Voltage (Vdss): 2000 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
на замовлення 460 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1651.67 грн |
| 30+ | 997.34 грн |
| 120+ | 867.46 грн |