IMZ120R350M1HXKSA1 Infineon Technologies
| Кількість | Ціна |
|---|---|
| 1+ | 354.41 грн |
| 10+ | 236.68 грн |
| 100+ | 180.44 грн |
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Технічний опис IMZ120R350M1HXKSA1 Infineon Technologies
Description: SICFET N-CH 1.2KV 4.7A TO247-4, Rds On (Max) @ Id, Vgs: 350mOhm @ 2A, 18V, Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +23V, -7V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Part Status: Active, Supplier Device Package: PG-TO247-4-1, Vgs(th) (Max) @ Id: 5.7V @ 1mA, Power Dissipation (Max): 60W (Tc), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.
Інші пропозиції IMZ120R350M1HXKSA1 за ціною від 154.16 грн до 417.87 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IMZ120R350M1HXKSA1 | Infineon Technologies |
 Description: SICFET N-CH 1.2KV 4.7A TO247-4Rds On (Max) @ Id, Vgs: 350mOhm @ 2A, 18V Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +23V, -7V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Part Status: Active Supplier Device Package: PG-TO247-4-1 Vgs(th) (Max) @ Id: 5.7V @ 1mA Power Dissipation (Max): 60W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
на замовлення 1184 шт: термін постачання 21-31 дні (днів) |
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| IMZ120R350M1HXKSA1 |
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Виробник: Infineon Technologies
Description: SICFET N-CH 1.2KV 4.7A TO247-4
Rds On (Max) @ Id, Vgs: 350mOhm @ 2A, 18V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Part Status: Active
Supplier Device Package: PG-TO247-4-1
Vgs(th) (Max) @ Id: 5.7V @ 1mA
Power Dissipation (Max): 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: SICFET N-CH 1.2KV 4.7A TO247-4
Rds On (Max) @ Id, Vgs: 350mOhm @ 2A, 18V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Part Status: Active
Supplier Device Package: PG-TO247-4-1
Vgs(th) (Max) @ Id: 5.7V @ 1mA
Power Dissipation (Max): 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
на замовлення 1184 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 417.87 грн |
| 30+ | 229.14 грн |
| 120+ | 191.02 грн |
| 510+ | 154.16 грн |