IMZA65R048M1HXKSA1 INFINEON TECHNOLOGIES
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Type of transistor: N-MOSFET
Technology: CoolSiC™; SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Pulsed drain current: 100A
Power dissipation: 125W
Case: TO247-4
Gate-source voltage: -5...23V
On-state resistance: 63mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
| Кількість | Ціна |
|---|---|
| 1+ | 597.54 грн |
| 5+ | 458.99 грн |
| 10+ | 427.59 грн |
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Технічний опис IMZA65R048M1HXKSA1 INFINEON TECHNOLOGIES
Description: MOSFET 650V NCH SIC TRENCH, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 5.7V @ 6mA, Supplier Device Package: PG-TO247-4-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V.
Інші пропозиції IMZA65R048M1HXKSA1 за ціною від 305.19 грн до 812.75 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IMZA65R048M1HXKSA1 | Infineon Technologies |
SiC MOSFETs SILICON CARBIDE MOSFET |
на замовлення 11 шт: термін постачання 21-30 дні (днів) |
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IMZA65R048M1HXKSA1 | Infineon Technologies |
Description: MOSFET 650V NCH SIC TRENCH Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 6mA Supplier Device Package: PG-TO247-4-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V |
на замовлення 34 шт: термін постачання 21-31 дні (днів) |
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| IMZA65R048M1HXKSA1 |
|
Виробник: Infineon Technologies
SiC MOSFETs SILICON CARBIDE MOSFET
SiC MOSFETs SILICON CARBIDE MOSFET
на замовлення 11 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 749.93 грн |
| 10+ | 488.76 грн |
| 100+ | 322.81 грн |
| 480+ | 305.19 грн |
| IMZA65R048M1HXKSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
Description: MOSFET 650V NCH SIC TRENCH
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Supplier Device Package: PG-TO247-4-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 812.75 грн |
| 30+ | 461.50 грн |