IMZA65R072M1HXKSA1 Infineon Technologies

Description: MOSFET 650V NCH SIC TRENCH, Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 400 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): +23V, -5V, Drive Voltage (Max Rds On, Min Rds On): 18V, Part Status: Active, Supplier Device Package: PG-TO247-4-3, Vgs(th) (Max) @ Id: 5.7V @ 4mA, Power Dissipation (Max): 96W (Tc), Rds On (Max) @ Id, Vgs: 94mOhm @ 13.3A, 18V, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube.