IMZA75R008M1HXKSA1 Infineon Technologies

Description: SILICON CARBIDE MOSFET, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 163A (Tc), Rds On (Max) @ Id, Vgs: 7.2mOhm @ 90.3A, 20V, Power Dissipation (Max): 517W (Tc), Vgs(th) (Max) @ Id: 5.6V @ 32.4mA, Supplier Device Package: PG-TO247-4-U02, Drive Voltage (Max Rds On, Min Rds On): 15V, 20V, Vgs (Max): +23V, -5V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 500 V, Input Capacitance (Ciss) (Max) @ Vds: 6137 pF @ 500 V.