Технічний опис IMZC120R022M2HXKSA1 Infineon Technologies
Description: SICFET N-CH 1200V 80A TO247, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 32A, 18V, Power Dissipation (Max): 329W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 10.1mA, Supplier Device Package: PG-TO247-4-17, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 800 V.
Інші пропозиції IMZC120R022M2HXKSA1 за ціною від 577.85 грн до 1357.49 грн
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IMZC120R022M2HXKSA1 | Infineon Technologies |
 Description: SICFET N-CH 1200V 80A TO247Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 32A, 18V Power Dissipation (Max): 329W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 10.1mA Supplier Device Package: PG-TO247-4-17 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 800 V |
на замовлення 841 шт: термін постачання 21-31 дні (днів) |
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| IMZC120R022M2HXKSA1 |
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Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 80A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 32A, 18V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 800 V
Description: SICFET N-CH 1200V 80A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 32A, 18V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 800 V
на замовлення 841 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 1357.49 грн |
| 30+ | 805.81 грн |
| 120+ | 696.06 грн |
| 510+ | 577.85 грн |