IMZC140R024M2HXKSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: IMZC140R024M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 32.1A, 18V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1.4 kV
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 1000 V
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Технічний опис IMZC140R024M2HXKSA1 Infineon Technologies
Description: IMZC140R024M2HXKSA1, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 74A (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 32.1A, 18V, Power Dissipation (Max): 330W (Tc), Vgs(th) (Max) @ Id: 5.1V @ 10.1mA, Supplier Device Package: PG-TO247-4-17, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +23V, -7V, Drain to Source Voltage (Vdss): 1.4 kV, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 1000 V.
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| Фото | Назва | Виробник | Інформація |
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Ціна |
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IMZC140R024M2HXKSA1 | Виробник : Infineon Technologies |
SiC MOSFETs CoolSiC 1400 V SiC MOSFET G2 with .XT interconnection technology |
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