IPA028N04NM3SXKSA1 Infineon Technologies

Виробник: Infineon Technologies
Description: TRENCH <= 40V PG-TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4V @ 95µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 89A, 10V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube