IPA032N06N3 G Infineon Technologies
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 317.33 грн |
| 10+ | 204.82 грн |
| 100+ | 133.24 грн |
| 500+ | 111.14 грн |
| 1000+ | 103.55 грн |
| 2500+ | 96.65 грн |
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Технічний опис IPA032N06N3 G Infineon Technologies
Description: N-CHANNEL POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO220-3-111, Vgs(th) (Max) @ Id: 4V @ 118µA, Power Dissipation (Max): 41W (Tc), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 84A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk.
Інші пропозиції IPA032N06N3 G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IPA032N06N3 G | Infineon Technologies |
 Description: N-CHANNEL POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO220-3-111 Vgs(th) (Max) @ Id: 4V @ 118µA Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 84A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
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| IPA032N06N3 G |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 4V @ 118µA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 4V @ 118µA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.