IPA052N08NM5SXKSA1 Infineon Technologies

Description: MOSFET N-CH 80V 64A TO220, Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: PG-TO220 Full Pack, Vgs(th) (Max) @ Id: 3.8V @ 65µA, Power Dissipation (Max): 38W (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 32A, 10V, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.