IPA083N10NM5SXKSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 50A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 25A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 102.52 грн |
| 10+ | 82.04 грн |
| 100+ | 65.24 грн |
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Технічний опис IPA083N10NM5SXKSA1 Infineon Technologies
Description: MOSFET N-CH 100V 50A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 8.3mOhm @ 25A, 10V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 49µA, Supplier Device Package: PG-TO220 Full Pack, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V.
Інші пропозиції IPA083N10NM5SXKSA1 за ціною від 82.27 грн до 103.87 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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IPA083N10NM5SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP Case: TO220FP Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 8.3mΩ Gate-source voltage: ±20V Drain current: 35A Drain-source voltage: 100V Pulsed drain current: 200A Power dissipation: 36W Technology: OptiMOS™ 3 Kind of channel: enhancement |
на замовлення 351 шт: термін постачання 14-30 дні (днів) |
|
| IPA083N10NM5SXKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 8.3mΩ
Gate-source voltage: ±20V
Drain current: 35A
Drain-source voltage: 100V
Pulsed drain current: 200A
Power dissipation: 36W
Technology: OptiMOS™ 3
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 8.3mΩ
Gate-source voltage: ±20V
Drain current: 35A
Drain-source voltage: 100V
Pulsed drain current: 200A
Power dissipation: 36W
Technology: OptiMOS™ 3
Kind of channel: enhancement
на замовлення 351 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.87 грн |
| 10+ | 91.41 грн |
| 50+ | 82.27 грн |