IPA320N20NM3SXKSA1 INFINEON
Виробник: INFINEON
Description: INFINEON - IPA320N20NM3SXKSA1 - Leistungs-MOSFET, n-Kanal, 200 V, 26 A, 0.0272 ohm, TO-220FP, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 26A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 38W
Bauform - Transistor: TO-220FP
Anzahl der Pins: 3Pin(s)
Produktpalette: OptiMOS 3
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0272ohm
SVHC: No SVHC (21-Jan-2025)
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Технічний опис IPA320N20NM3SXKSA1 INFINEON
Description: INFINEON - IPA320N20NM3SXKSA1 - Leistungs-MOSFET, n-Kanal, 200 V, 26 A, 0.0272 ohm, TO-220FP, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 200V, rohsCompliant: YES, Dauer-Drainstrom Id: 26A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 38W, Bauform - Transistor: TO-220FP, Anzahl der Pins: 3Pin(s), Produktpalette: OptiMOS 3, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.0272ohm, SVHC: No SVHC (21-Jan-2025).
Інші пропозиції IPA320N20NM3SXKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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IPA320N20NM3SXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 200V 26A TO220 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO220 Full Pack Vgs(th) (Max) @ Id: 4V @ 89µA Power Dissipation (Max): 38W (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 26A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) |
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 |
IPA320N20NM3SXKSA1 | Infineon Technologies |
MOSFETs |
товару немає в наявності |
В кошику од. на суму грн. |
| IPA320N20NM3SXKSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 26A TO220
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 89µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Description: MOSFET N-CH 200V 26A TO220
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 89µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
товару немає в наявності
В кошику
од. на суму грн.
| IPA320N20NM3SXKSA1 |
|
Виробник: Infineon Technologies
MOSFETs
MOSFETs
товару немає в наявності
В кошику
од. на суму грн.