IPA50R190CEXKSA2 Infineon Technologies

Description: MOSFET N-CH 500V 18.5A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 510µA, Supplier Device Package: PG-TO220-FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 13V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V.