IPA50R199CPXKSA1

IPA50R199CPXKSA1 INFINEON TECHNOLOGIES


IPA50R199CP-DTE.pdf Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; TO220FP
Kind of package: tube
Drain-source voltage: 500V
Drain current: 17A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
кількість в упаковці: 1 шт
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Технічний опис IPA50R199CPXKSA1 INFINEON TECHNOLOGIES

Description: MOSFET N-CH 500V 17A TO220-FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V, Power Dissipation (Max): 139W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 660µA, Supplier Device Package: PG-TO220-3-31, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 100 V.

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IPA50R199CPXKSA1 IPA50R199CPXKSA1 Виробник : Infineon Technologies 1188208208652742infineon-ipa50r199cp-ds-v02_02-en.pdffileiddb3a304320896aa201208b.pdf Trans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220FP Tube
товар відсутній
IPA50R199CPXKSA1 IPA50R199CPXKSA1 Виробник : Infineon Technologies 1188208208652742infineon-ipa50r199cp-ds-v02_02-en.pdffileiddb3a304320896aa201208b.pdf Trans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220FP Tube
товар відсутній
IPA50R199CPXKSA1 IPA50R199CPXKSA1 Виробник : Infineon Technologies 1188208208652742infineon-ipa50r199cp-ds-v02_02-en.pdffileiddb3a304320896aa201208b.pdf Trans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220FP Tube
товар відсутній
IPA50R199CPXKSA1 IPA50R199CPXKSA1 Виробник : Infineon Technologies IPA50R199CP_rev2.0.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a304320896aa201208b347657008a Description: MOSFET N-CH 500V 17A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 660µA
Supplier Device Package: PG-TO220-3-31
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 100 V
товар відсутній
IPA50R199CPXKSA1 IPA50R199CPXKSA1 Виробник : Infineon Technologies IPA50R199CP_rev2.0.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a304320896aa201208b347657008a MOSFET HIGH POWER_LEGACY
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IPA50R199CPXKSA1 IPA50R199CPXKSA1 Виробник : INFINEON TECHNOLOGIES IPA50R199CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; 139W; TO220FP
Kind of package: tube
Drain-source voltage: 500V
Drain current: 17A
On-state resistance: 0.199Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Case: TO220FP
товар відсутній