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IPA60R450E6XKSA1

IPA60R450E6XKSA1 Infineon Technologies

IPx60R450E6.pdf
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9.2A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 3.5V @ 280µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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Технічний опис IPA60R450E6XKSA1 Infineon Technologies

Description: MOSFET N-CH 600V 9.2A TO220-FP, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO220-FP, Vgs(th) (Max) @ Id: 3.5V @ 280µA, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 3.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.

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IPA60R450E6XKSA1 IPA60R450E6XKSA1 INFINEON TECHNOLOGIES IPA60R450E6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; 30W; TO220FP
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.45Ω
Drain current: 9.2A
Gate-source voltage: ±20V
Power dissipation: 30W
Drain-source voltage: 600V
Technology: CoolMOS™ E6
Case: TO220FP
Kind of channel: enhancement
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IPA60R450E6XKSA1 IPA60R450E6-DTE.pdf
IPA60R450E6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.2A; 30W; TO220FP
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.45Ω
Drain current: 9.2A
Gate-source voltage: ±20V
Power dissipation: 30W
Drain-source voltage: 600V
Technology: CoolMOS™ E6
Case: TO220FP
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.