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| 10+ | 56.49 грн |
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Технічний опис IPA65R1K5CEXKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 5.2A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 130µA, Supplier Device Package: PG-TO220-FP, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V.
Інші пропозиції IPA65R1K5CEXKSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IPA65R1K5CEXKSA1 | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 650V 5.2A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 130µA Supplier Device Package: PG-TO220-FP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V |
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